transient voltage suppressors for esd protection revision december 18 , 2013 1 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd3.3v88d - 2c un semiconductor co., ltd. www. unsemi .com .tw symbol parameter value units p pp peak pulse power (tp=8/20s waveform) 4 0 w a t t s t j operating junction temperature range - 55 to + 1 5 0 oc t stg storage temperature range - 55 to +150 oc t l soldering temperature, t max = 10s 260 oc d escription feature functional diagram applications mechanical data mechanical characteristics d n f 1 0 0 6 p 3 ? 40 watts peak pulse power per line (tp=8/20s) ? protects two birectional i/o lines ? low clamping voltage ? working voltages : 3.3v ? low leakage current ? provides esd protection to iec61000 - 4 - 2(esd): 3 0 kv (air discharge) 3 0 kv (contact discharge); ? cell phone handsets and accessories ? microprocessor based equipment ? personal digital assistants (pdas) notebooks, desktops, and servers portable instrumentation peripherals pagers ? dfn1006p3 (1.0x0.6x0.5mm) packag e ? molding compound flammability rating : ul 94v - o ? weight 0.5 millgrams (approximate) ? quantity per reel : 10,000pcs ? reel size : 7 inch ? lead finish : lead free the esd 3 .3 v88d - 2 c is u ltra low capacitance tvs arrays designed to protect high speed d ata interfaces. this series has been specificall y designed to protect sensi tive components which are connected to high - sp eed data and transmission lines from over - voltage caused by esd (electrostatic discharge), cde (cable discharge ev ents), and eft (electrical fast transients).
transient voltage suppressors for esd protection revision december 18 , 2013 2 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd3.3v88d - 2c un semiconductor co., ltd. www. unsemi .com .tw characteristics symbol test conditions min. typ. max. unit reverse working voltage v rwm -- -- -- 3 .3 v reverse breakdown voltage v br it=1ma 3 .5 -- - - v reverse leakage current i r v rwm = 5 v t=25 c -- -- 0.0 1 a positive clamping voltage v c1 i pp = 4 a t p =8/20 s -- - - 1 0.5 v capacitance between i/o and gnd c j2 v r =0v f=1mhz -- -- 7 pf v r = 3 .3 v f=1mhz -- -- 4.5 electrical characteristics ( @ 25 unless otherwise specified ) characteristic curves 60ns 10% percent of peak pulse current % 30ns tr = 0.7~1ns time (ns) 90% 100% fig1. 8/20 s pulse waveform fig2 . esd p ulse w aveform ( according to iec 61000 - 4 - 2 ) fig3. power derating curve fig4. v - i characteristics for a bidirectional esd protection diode
transient voltage suppressors for esd protection revision december 18 , 2013 3 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd3.3v88d - 2c un semiconductor co., ltd. www. unsemi .com .tw characteristic curves fig 5 . esd clamping volatge screenshot positive 8 kv contact per iec 61000 - 4 - 2 fig 6 . esd clamping volatge screenshot negative 8 kv contact per iec 61000 - 4 - 2 dnf1006p3 package outline & dimensions
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